Midea develops thin film semiconductors with a single atomic diameter

Researchers from North Carolina State University in the U.S. have announced a breakthrough in semiconductor technology, unveiling a new method for producing high-quality, atomic-scale semiconductor films—films that are just one atom thick. According to Professor Cao Linyou, an assistant professor in materials science and engineering, this innovation could significantly reduce the size of current semiconductor devices, including lasers, LEDs, and computer chips. The material at the center of this research is molybdenum sulfide (MoS₂), a cost-effective semiconductor with electronic and optical properties comparable to those used in today’s industry. What makes MoS₂ unique is its ability to form stable monolayer films without losing its original characteristics—a feature not commonly found in other semiconductor materials. In their process, researchers placed sulfur powder and molybdenum chloride in a furnace and heated it up to 850°C. As the temperature increased, the powders vaporized and chemically reacted to form molybdenum sulfide. By maintaining the high temperature, the resulting compound was deposited onto a substrate, forming a thin film. Professor Cao explained that the key to their success lay in discovering a self-limiting growth mechanism. This allows precise control over the thickness of the molybdenum sulfide layer by adjusting the partial pressure and vapor pressure within the furnace. Partial pressure refers to the tendency of atoms or molecules in the air to condense onto the substrate, while vapor pressure reflects the tendency of atoms on the substrate to evaporate back into the air. To achieve a single layer of MoS₂, the partial pressure must be higher than the vapor pressure. If the partial pressure is set between the vapor pressures of a monolayer and a bilayer, the system reaches equilibrium, preventing further growth beyond a single layer. This self-regulating process ensures uniform, ultra-thin films. The amount of molybdenum chloride in the furnace directly affects the partial pressure. More of it increases the pressure, leading to thicker films. Using this technique, the team successfully produced single-layer MoS₂ films across wafer-sized substrates. They also demonstrated the ability to grow 2-4 layers by fine-tuning the pressure conditions. Looking ahead, the researchers are exploring similar methods to create films from different materials. They’re also applying this technology to fabricate field-effect transistors and light-emitting diodes, aiming to push the boundaries of nanoscale electronics and optoelectronics. (Reporter: Mao Li)

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