Midea develops thin film semiconductors with a single atomic diameter

Researchers at North Carolina State University in the U.S. have announced a breakthrough in semiconductor technology, developing a method to create ultra-thin, high-quality films at the atomic scale. These films are just one atom thick, marking a significant advancement in miniaturization. Assistant Professor Cao Linyou from the Department of Materials Science and Engineering highlighted that this innovation could revolutionize existing technologies such as lasers, light-emitting diodes (LEDs), and computer chips by pushing their size down to the atomic level. The material used in the study is molybdenum sulfide, a cost-effective semiconductor with electronic and optical properties comparable to those currently used in the industry. What makes it unique is its ability to form monolayer films without losing its original characteristics, unlike other semiconductor materials that often degrade when reduced to single layers. In the new manufacturing process, researchers placed sulfur powder and molybdenum chloride in a furnace and heated it to 850 degrees Celsius. At this temperature, the powders vaporized and reacted chemically to form molybdenum sulfide. By maintaining the high temperature, the compound was then deposited onto a substrate, forming a thin film. According to Cao Linyou, the key to the success of this technique lies in discovering a self-limiting growth mechanism. This allows precise control over the thickness of the molybdenum sulfide layer by adjusting the partial pressure and vapor pressure within the furnace. Partial pressure refers to the tendency of atoms or molecules in the air to condense onto the substrate, while vapor pressure represents the reverse—how easily solid atoms on the substrate can evaporate back into the air. To achieve a single-layer film, the partial pressure must be higher than the vapor pressure. If the partial pressure is just right—higher than that of a monolayer but lower than that of a bilayer—the system reaches a balance, ensuring only a single layer forms. Once this occurs, the growth stops automatically, preventing the formation of multiple layers. The partial pressure is controlled by varying the amount of molybdenum chloride in the furnace. More of it leads to a higher partial pressure, resulting in thicker films. Using this method, the team successfully produced single-layer molybdenum sulfide films with wafer-scale dimensions and atomic-level precision. They were also able to fabricate 2-4 layer films by adjusting the pressure conditions. Looking ahead, the researchers are exploring similar techniques for other materials and are working on applying this technology to produce field-effect transistors and LEDs. This development could pave the way for next-generation electronics with unprecedented performance and efficiency. (Reporter: Mao Li)

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