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Anti-ferromagnetic Mn3Ge Hall effect concept map
Crystal Structure of Mn3Ge and Magnetic Structure in Magnetic Field
(a) Bamboo basket grid structure with two layers of z=0 and z=1/2. (b) Mn spin-electron magnetic structure when a B//[2110] magnetic field is applied. (c) Magnetic structure when a B//[0110] magnetic field is applied
Abnormal Hall effect and magnetization due to magnetic field changes
(a) The Hall effect will remain at zero magnetic field, so it can show anomalous Hall effect. (b) In the 100G magnetization, there was a huge anomalous Hall effect at the same time as the spin reversal.
The University of Tokyo, Japan, announced on June 3, 2016 that it has discovered an antiferromagnetic material that shows unprecedented spontaneous spontaneous Hall effect. It is expected to develop a new generation of antiferromagnetic storage materials that can generate a huge electromotive force and suppress heat generation with a very small current.
In 2015, the research team discovered for the first time in the world an antiferromagnetic substance “Mn3Sn†that spontaneously shows a huge anomalous Hall effect. This time, through a series of explorations of related substances, it was found that the manganese-germanium compound “Mn3Geâ€, which replaces Sn with Ge, exhibits a Hall conductivity of 400Ω-1cm-1 at a low temperature of 5K, which is the maximum that Mn3Sn exhibits. More than 4 times the value.
Mn3Ge has a crystal structure called "Kagome lattice" in which manganese atoms and their spin atoms are arranged at the apex of an equilateral triangle. At this point, if the neighboring spin electrons point in opposite directions and the forces that cancel each other out (antiferromagnetic interactions) work, the three vertices of the triangle will be evenly matched in strength and will eventually tilt at 120 degrees each other. The state is stable.
It was found that when a magnetic field was applied to this state from the outside, a magnetization of several nano-micrometers per one manganese element occurred. Although this magnetization is very small, about one-thousandth of that of ordinary ferromagnets, magnetization is reversed under the action of a few hundred gauss of a small magnetic field, and the Hall voltage sign is also reversed. The research team also found that this spontaneous anomalous Hall effect of Mn3Ge can range from -270°C to its Ne (antiferromagnetic to paramagnetic temperature), which is a wide temperature range between 120°C. appear.
Conventional ferromagnetic material storage elements are affected by the leakage magnetic field. If antiferromagnetic material is used, the spin electrons can be uniformly directed in the opposite direction, and spin-electrons hardly generate a leakage magnetic field on the whole. Therefore, high integration can be realized. Change. Moreover, the antiferromagnetic material can generally exhibit a performance that is faster than the ferromagnetic material by more than 3 digits. In addition, the material can be synthesized in a relatively simple manner, and it is composed of elements having a high Clark value, low cost, and no toxicity, and therefore is a practical material having excellent characteristics. In the future, research and development with practical goals will be expected to make progress.
The results of this study are scheduled to be published on the Internet version of the Physical Review Applied, a scientific journal of the United States, on June 9, 2016. (Special Contributor: Kudosuke)
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