Powerful 2D materials to open the first of ultra low power transistors

While squeezing transistors into smaller areas of computer chips, the semiconductor industry is working to improve the problem of device overheating. 201711100846541580.jpg Now researchers at York University and the University of the Roman Empire believe that the solution lies in a composite of monolayer graphene and transition metal dichalcogenide (TMDC). They found that these materials can be used to achieve electron spins. The new study, published in the journal Physics Review News, may lead the low-energy electronics industry in the future. Dr. Aires Ferreira, researcher at the Department of Physics at York University, said: "Over the years, we have been looking for good conductors that can efficiently electronically control electron spins." We found that when two-dimensional graphene is paired with certain semiconductor layered materials, This can be done very easily. Our calculations show that applying a small voltage across the graphene layer results in a net polarization of conduction spins. We believe that our predictions will attract a lot of interest from the spintronics community. The flexibility of the graphene-based structure, the atomic-scale properties are the main advantages of the application, in addition, the existence of semiconductor components is also a highlight. The spin of an electron is like a tiny point magnet that can only point in two directions -- up and down. In most electron spin-arranged materials, a magnetic response is generated that can be used to encode information. The "spin flow" flows in two opposite directions, "up" and "down", without a net charge, so theoretically no heating is produced. Therefore, the control of the rotation information will open the way to the ultra-efficient computer chip. The team said that when a small current passes through the graphene layer, it is "spin-orbital" due to its proximity to the TMDC substrate, which is spin-polarized in the plane. They also show that even at room temperature, the efficiency of charge-to-spin conversion can be quite high. Manuel Offidani, a Ph.D. student in the York Department of Physics, performed most of the complex calculations in this study. He said: "Electron spin-polarized current is an elegant relativistic phenomenon that occurs at the interface between different materials." We chose graphene mainly because of its excellent structural and electronic properties, in order to enhance graphite. For the relativistic effect of charge carriers in olefins, we have studied materials that match the recently discovered layered semiconductors. Professor Roberto Raimondi, head of the spintronics group at the Second University of Rome, Romania, said: "Electronic spin currents have attracted a lot of attention in the field of spintronics due to the possibility of orientation and are common due to specific symmetry conditions. In this respect, our calculations show that the combination of graphene and transition metal dichalcogenide is an ideal platform, and the abstract theory can be immediately applied to demonstrate experimental and technological development. In 2001, current induction in non-magnetic media Spin polarization was first demonstrated in semiconductors and has recently been demonstrated in metal heterointerfaces. Now researchers predict that graphene on the TMDC monolayer will have a similar effect. Surprisingly, they found graphene. The uniqueness of the state of the electrons allows the charge to spin up to 94%. This makes graphene-based composites an ultra-compact and more environmentally friendly spin logic device. Mirco Milletarì, a former member of the spintronics team at Roma Tre University The doctor said: "This work follows the understanding of the basic law, enabling us to Systems like charge - spin conversion efficiency is optimal for technical applications, especially for future devices of low power consumption and durability of the electronic device.

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